国家/地区 日本（2） 美国（2）
IPC部 B（3）
IPC大类 C01（3）
IPC小类 C01B（3）
IPC C01B032/184（3）
发明人
公开年 2018（3）
申请年 2018（2） 
专利权人

Preparing graphene/metal composite material useful for high speed train insulated gate bipolar transistor packaging comprises e.g. preparing graphene oxide dispersion, coating layer of metal boron and titanium on surface of graphene film.

CHU K, WANG F, HUANG D, LI Y

Graphene nanoribbon used in a semiconductor device which his useful in electronic devices e.g. computers, smartphones, portable telephones and tablet terminals comprises a chiral edge to which an electron-withdrawing group is bonded.

OHTOMO M, OTOMO M

Production of graphene used as wiring material, involves supplying carbon-containing gas and metal catalyst into chamber and reactivating catalyst by supplying process gas and carbon-containing gas to regrow graphene on catalyst surface.

IFUKU R, MATSUMOTO T