国家/地区 中国（2）
IPC部 C（3）
IPC大类 C01（3）
IPC小类 C01B（3） C23C（3）
IPC C23C014/14（3）
发明人
公开年 2013（2）
申请年 2012（3）
专利权人

Production of graphene involves supplying carbon to heated transition metal surface, and forming graphene on buffer thin-film epitaxially grown on nickel substrate.

FUJII T, SATO M

Composite substrate used for optoelectronic component and thin film solar battery, comprises single graphene layer and metal nano array layer.

REN F, YING J, JIANG C, XIAO X, DAI Z

Alloy method for preparing large area graphene thin film by depositing carbon alloy film on high temperature resistant substrate, annealing film, providing carbon atom concentration in alloy thin film surface and growing graphene thin film.

XU Z