国家/地区 美国（3） 韩国（2）
IPC部 C（4）
IPC大类 C23（4） C01（2） H01（2）
IPC小类 C23C（4） C01B（2）
IPC C23C014/34（4）
发明人
公开年 2018（4）
申请年 2018（2） 
专利权人

Synthesis of graphene for optoelectronic devices, involves placing copper-nickel thin film laminate in chemical vapor deposition, bringing graphene precursor into contact with thin film laminate, and performing chemical vapor deposition.

CHO K, YOO M S, LEE H C, CHO K W

Transfer-free method for producing graphene thin film involves forming titanium buffer layer on target substrate and growing graphene thin film on titanium buffer layer in which both steps are performed in oxygen-free atmosphere.

YOON S, PARK B, YOON S G, PARK B J

Production of graphene covalently functionalized with organic molecule for manufacture of e.g. electronics involves bombarding surface of system containing graphene and non-metallic substrate with beam of noble gas ions and heating.

ACEITUNO BUENO R, MARTINEZ RUIZ J I, LUCCAS R F, LOPEZ FAGUNDEZ M F, MOMPEAN GARCIA F, GARCIA HERNANDEZ M D M, MARTIN GAGO J A, BUENO R, RUIZ J I, FAGUNDEZ M F, GARCIA F, HERNANDEZ M D M, GAGO J A

Sensor film, has flexible substrate which is attached to sensor film and composite electrode which comprises first portion that includes metal layer in graphene layer.

AHMED K, MAJHI P