国家/地区 美国（6） 中国（2） 韩国（2） 世界知识产权组织（2）
IPC部 B（7）
IPC大类 C23（7） B82（5） C01（4）
B32（3） B05（2） H05（2）
IPC小类 C23C（7） B82Y（5） C01B（4）
B32B（3） B05D（2）
IPC C23C016/00（7）
发明人 EDDY C R（2） GARCES N（2） GASKILL D K（2）
JERNIGAN G G（2） WHEELER V D（2）
公开年 2013（7）
申请年 2012（3）  2011（2）  2013（2） 
专利权人 US SEC OF NA.（2）

Structure useful to shield electromagnetic disorders for shielding electromagnetic radiation, comprises thin layer of graphene and flexible substrate, in which thin layer of graphene is applied on flexible substrate and is doped with dopant.

AVOURIS P, GARCIA A V, SUNG C, XIA F, YAN H

Functionalizing epitaxial graphene sample surface for atomic layer deposition of dielectric in reactor, by subjecting sample to ex situ functionalization step, and subjecting sample having hydroxide terminated surface to in situ treatment.

GARCES N, WHEELER V D, GASKILL D K, EDDY C R, JERNIGAN G G

Fabricating graphene, comprises depositing graphene seed layer on substrate of base layer, depositing catalyst metal layer on substrate and graphene seed layer and introducing carbon atom to graphene seed layer.

PATIL V

Fabricating graphene structures, comprises fabricating a crystalline graphene layer on a surface, and subsequently decreasing crystallographic disorder of crystallographically disordered edges by heating crystalline graphene layer.

ARNOLD M S, GOPALAN P, SAFRON N S, KIM M, UNG K M

Making graphene film comprises providing copper foil, placing foil in microwave plasma chemical vapor deposition chamber, evacuating chamber, providing hydrogen gas to chamber, exposing foil to plasma, and providing methane gas to chamber.

FISHER T S, KUMAR A

Carbon material with protective layer, comprises material layer comprising graphite material and/or graphene, and polymer vapor deposition layer having thickness of preset range, formed on material layer.

MA Y

Preparing surface of epitaxial graphene sample for atomic layer deposition (ALD) of dielectric in ALD reactor, comprises pre-treating (e.g. immersing in e.g. hydrofluoric acid) sample ex situ outside reactor and then in situ inside reactor.

GARCES N, WHEELER V D, GASKILL D K, EDDY C R, JERNIGAN G G