国家/地区 美国（4）
IPC部 C（4）
IPC大类 C23（4） H01（4） C01（2）
IPC小类 C23C（4） H01L（3） C01B（2）
IPC C23C016/04（4）
发明人
公开年 2021（4）
申请年 2021（4）
专利权人

Forming layer, comprises e.g. exposing substrate to aromatic precursor in processing chamber, rinsing aromatic precursor from processing chamber, and heating substrate deposit graphene hard mask layer on substrate.

BHUYAN B J, LEONCINI A

Encapsulating graphene in semiconductor substrate, comprises selectively depositing graphene on metal layer, depositing metal oxide over graphene by thermal-based deposition technique, and depositing hermetic barrier over metal oxide.

VARADARAJAN B N, NARKEVICIUTE I, SHARMA K

Connector pair for use with electrical device, has first connector that includes first electrical contact unit which is provided with graphene layer on metal base material, and second connector includes second electrical contact unit electrically connected to first connector by graphene layer.

KUBO T, SEKI K, OKADA M, HATAKEYAMA K, KOGA K, SHIMIZU T, YE N, KAWAI H, KAWAI Y, GUAN H

Semiconductor device comprises conductive contact set in first insulation layer, and second insulation layer set on first insulation layer and including contact hole that exposes top surface of conductive contact.

JUNG H, LEE J, PARK J