国家/地区 美国（4）
IPC部 C（4）
IPC大类 C23（4） H01（4） C01（3）
IPC小类 C23C（4） C01B（3） H01L（3）
IPC C23C016/06（4）
发明人
公开年 2015（2）
申请年 2015（4）
专利权人

Production of integrated layer of highly oriented halogenated graphene sheets or molecules used as dielectric material component for microelectronic devices involves preparing graphene oxide dispersion or gel having graphene oxide sheets.

ZHAMU A, JANG B Z, ZHAMUARUNA

Production method of stacked electrode, involves removing solvent from applied dispersion liquid of metal nanowires to prepare metal wiring on multi-layered graphene film.

NAITO K, TSUTSUMI E, YOSHINAGA N, AKASAKA Y

Method of manufacturing graphene layer on substrate, involves laminating metalized graphene layer to second substrate.

LIPOMI D J, ZARETSKI A, LIPOMI D

Stacking structure for use in electronic device, has intermediate layer placed on graphene layer that is formed from linear type precursor, and material layer placed on intermediate layer and formed through atomic layer deposition.

JEONG S, PARK S, SHIN H, GU Y, KIM H, YANG J, GU Y H, JEONG S J, KIM H S, PARK S J, SHIN H J, YANG J H