国家/地区 中国（4） 韩国（2） 美国（2）
IPC部 C（4） H（2）
IPC大类 C23（4）
IPC小类 C23C（4）
IPC C23C016/26（4）
发明人 LI Y（4）
公开年 2021（2） 2022（2）
申请年 2021（4）
专利权人 SAMSUNG ELEC.（2）

Method for forming interconnect structure for semiconductor devices, involves forming carbon layer having bonding structure on first metal layer of substrate, and forming second metal layer of substrate electrically connected to first metal layer.

LEE Y, SHIN H, SHIN J, BYUN K, LEE W, AHN S, SHIN K, SHIN K W, BYUN K E, SHIN H J, LEE Y S, SHEN X, LI Y

Composite material used for improving electroconductivity of metal, has graphene fragment layer that comprises graphene fragments uniformly spread on metal foil layer.

GONG M, SUN B, WANG Y, CHEN Q, YANG W, LI Y, LIANG J, LIU B, ZHANG X, PEI Z

Conductive structure, comprises conductive material layer including metal and work function control layer including two-dimensional material with defect, to control work function of conductive structure.

LEE C, KIM C, LEE E, BYUN K, KIM S, SHIN H, SHIN H J, BYUN K E, LEE C S, LI C, JIN C, LI Y, JIN S, SHEN X

Method for high-quality, rapid, large-area preparation of vertical graphene films, comprises e.g. passing rolled substrate through reaction chamber, turning on plasma, winding of rotating shaft to form vertical graphene and reacting.

WANG Z, LI Y, LIU M, LIU J