国家/地区 美国（3）
IPC部 C（3）
IPC大类 C23（3） H01（3） C01（2）
IPC小类 C23C（3） H01L（3） C01B（2）
IPC C23C016/26（3）
发明人 SHIN K（3）
公开年 2022（2）
申请年 2021（3）
专利权人 SAMSUNG ELEC.（3）

Method of forming nano crystalline graphene, involves arranging substrate having pattern in reaction chamber, injecting reaction gas into reaction chamber, reaction gas including carbon source gas, inert gas, and hydrogen gas that are mixed, generating plasma of reaction gas in reaction chamber.

LEE C, JUNG A, SHIN H, SHIN K, SHIN K W, SHIN H J, JUNG A R, LEE C S

Method for forming interconnect structure for semiconductor devices, involves forming carbon layer having bonding structure on first metal layer of substrate, and forming second metal layer of substrate electrically connected to first metal layer.

LEE Y, SHIN H, SHIN J, BYUN K, LEE W, AHN S, SHIN K, SHIN K W, BYUN K E, SHIN H J, LEE Y S, SHEN X, LI Y

Forming graphene product including nanocrystalline graphene by plasma enhanced chemical vapor deposition process, involves growing nanocrystalline graphene directly on substrate using plasma of reaction gas.

LEE E, LEE S, BYUN K, KIM C, LEE C, SHIN H, SHIN K, SONG H