国家/地区 中国（3）
IPC部 C（3）
IPC大类 C01（3）
IPC小类 C01B（3）
IPC C23C016/26（3）
发明人 DU C（3）
公开年
申请年
专利权人 CHINESE ACAD.（2） CHONGQING MO.（2）

Imaging production of one-dimensional carbon nanotube and three-dimensional graphene composite material by patterning growth substrate, soaking in hydrofluoric acid solution, ultrasonically processing and magnetic control sputtering.

YU Y, HU Y, SUN T, YANG J, WEI D, SHI H, DU C

Preparing a graphene film through low-temperature fixed-point nucleating comprises e.g. coating layer of carbon source solution on metal substrate, drying, patterning on metal substrate, graphene nucleating, diffusing and cooling.

GAO X, DU C, JIANG H, LI Z, SHI H, ZHANG Y, ZHU P, HUANG D

High-temperature continuous graphene growing device has gas inlet mechanism that is arranged for providing graphene growth reaction gas into reaction chamber.

DU C, HUANG D, LI Z, SHI H, WEI D, ZHANG Y