国家/地区 中国（4）
IPC部 C（4）
IPC大类 C23（4）
IPC小类 C23C（4） C01B（2）
IPC C23C016/26（4）
发明人 PENG H（4）
公开年 2021（4）
申请年 2020（3） 
专利权人 BEIJING GRAP.（4） UNIV PEKING（4）

Device for preparing graphene by plasma enhanced chemical vapor deposition (PECVD), has first region of deposition furnace that is provided with overlapped portion, and second polar plate that is connected to grounding end of plasma source.

LIU Z, WU Q, CAO F, WANG X, WANG K, YANG H, PENG H

Preparing clean double-layer and few-layer graphene film, comprises placing substrate in atmosphere containing first oxidizing gas, annealing, placing substrate in reaction mixed gas containing reducing gas, a carbon source and a second oxidation gas, and heating to growth temperature.

LI G, ZHANG Y, LIU X, ZHANG M, GAO X, ZHANG J, PENG H, LIU Z

Improving cleanliness of graphene film comprises subjecting graphene film to high-temperature treatment in vacuum environment, and carrying out chemical vapor deposition method.

CHEN H, XUE R, LIU X, ZHANG J, LI G, PENG H, LIU Z

Graphene composite metal foil double-side growth device has chemical vapor deposition furnace comprising plasma glow region and heating growth region, and connected with unwinding shaft and winding shaft on both sides.

PENG H, CAO F, YANG H, WANG K, WANG X, LIU Z