国家/地区 中国（3）
IPC部 C（3）
IPC大类 C23（3）
IPC小类 C23C（3）
IPC C23C016/26（3）
发明人 WANG C（3）
公开年 2021（3）
申请年 2021（2） 
专利权人

Method for preparing graphene film by chemical vapor deposition electron irradiation, involves attracting electrons in carbon plasma to surface of substrate to assist growth, forming electron irradiation, and depositing carbon plasma on substrate to generate graphene carbon film.

DIAO D, CHEN X, WANG C

Vanadium pentoxide heat-sensitive film with sandwich structure used for silicon-based semiconductor, comprises substrate layer, buffer layer, and heat-sensitive layer including vanadium pentoxide layers and carrier concentration increasing layer located between adjacent vanadium pentoxide layers.

HUANG L, LU H, MA Z, WANG C, FANG M, CAI G, GAO J, HUANG S

Preparation of few-layer graphene film by normal pressure chemical vapor deposition, cleaning copper foil substrate, annealing copper foil for first time, carrying out nitric acid solution treatment to copper foil, and cooling graphene film.

ZHAO B, LI X, ZHANG Q, ZHOU T, WANG R, WANG C, YUAN L