国家/地区 韩国（4） 美国（3） 中国（2） 欧洲专利局（EPO）（2） 法国（2） 日本（2）
IPC部 C（6）
IPC大类 C23（6）
IPC小类 C23C（6）
IPC C23C016/26（6）
发明人
公开年 2010（6）
申请年 2009（3）  2010（2） 
专利权人

Manufacture of graphene involves producing thermal plasma flame, producing carbon atom beam by adding air or liquid carbon source material into flame, producing beam with decreasing energy of carbon atom beam and crashing carbon atom beam.

SEO J, KIM J, JUNG S S, JU H K

Process for elaboration of graphene, useful e.g. in nanoelectronics, comprises depositing layer comprising amorphous carbon on substrate and annealing layer by photonic- and/or electronic-irradiation to obtain layer comprising graphene.

ZENASNI A, AJIJEU J

Preparation of graphene-modified metallic foam materials comprises placing metallic foam materials in vacuum tube-type furnace, sintering in non-oxidation air, and carrying out chemical vapor deposition to deposit graphene.

LIU Y, XUE Y, WU B, YU G, CHEN J, HUANG L

Controlled growth of graphene film comprises preparing substrate of metal layer having phase diagram with carbon on surface to obtain homogeneous solid solution, exposing layer to controlled flow e.g. carbon atoms and changing the phase.

BARATON L, COJOCARU C S, PRIBAT D, COJOCARU C

In situ preparation of composite film of graphene/carbon nanotube by placing mixture of ferrocene and sulfur in reactor, placing polycrystal nickel pieces, introducing hydrogen/argon mixed gas, heating, and cooling to room temperature.

LI C, LI X, WANG K, WEI J, WU D, ZHU H

AA' stacked graphite for use as e.g. electrode material for flexible display, comprises graphene stacked in sequence of AA', where AA' sequence is alternate graphene layers exhibiting AA' stacking translated by half hexagon.

AHN J, LEE J, LEE S, LEE W, LEE U, LEE J K, LEE S H, AHN J P, LEE S C, LEE W S