国家/地区 韩国（2） 美国（2） 世界知识产权组织（2）
IPC部 B（3）
IPC大类 B01（3）
IPC小类 B01J（3）
IPC B01J019/08（3）
发明人 CHOI I（2） CHOI I S（2） LEE K（2）
LEE K J（2）
公开年 2012（3）
申请年 2011（3）
专利权人 KOREA ADV IN.（2）

Fabricating graphene oxide material involves providing substrate; depositing graphene layer onto substrate; and oxidizing portion of graphene layer, with dry oxidation technique for period of time sufficient to obtain band gap.

GHARIB M, ARIA A I, GANI A W

Manufacture of graphene for fabricating graphene semiconductor device, involves contacting reaction gas for graphene growth on substrate surface, heating substrate, and growing graphene.

LEE K, CHOI I, LEE K J, CHOI I S, JAE L G, SEONG C I

Forming graphene, comprises providing substrate and carbon-containing reactant source in chamber, and radiating laser beam on substrate to decompose carbon-containing reactant source and form graphene over substrate.

LEE K, CHOI I, CHOI S, HONG B, LEE K J, CHOI I S, CHOI S Y, HONG B H