国家/地区 韩国（2） 美国（2）
IPC部 B（3）
IPC大类 B01（3） C01（3） C23（3）
IPC小类 B01J（3）
IPC C23C016/26（3）
发明人
公开年
申请年
专利权人

Nanocrystalline graphene used for complementary metal-oxide-semiconductor process, comprises grains in stack of graphene sheets.

KIM S, BYUN K, CHO Y, SHIN K, LEE E, LEE C, SONG H, SHIN H, YOON J, LEE S, LIM H, BYUN K E, CHO Y C, SHIN K W, LEE C S, SONG H J, SHIN H J, SU Y J, LEE S Y, LIM H S, LI Z, YOUN J, SHEN X, LI C, LI Y, ZHAO L, JIN S

Synthesizing graphene pattern by physically adhering catalyst block including catalyst material to portion of growth substrate, and forming graphene thin film selectively at interface between catalyst block and growth substrate.

PARK J, SIM Y, KIM J, SIM Y M, PARKJAEHYUN

Method of preparing graphene from methane using catalyst in a reactive furnace.

CHEN M, CHEN B, KOO H, CHEN B F, KOO H S