国家/地区 中国（4）
IPC部 B（4）
IPC大类 C01（4） C23（4） H01（4）
B22（2） C22（2）
IPC小类 C01B（4）
IPC C01B032/186（4）
发明人 LI Y（2）
公开年 2022（4）
申请年 2022（3） 
专利权人

Nanocrystalline graphene used for complementary metal-oxide-semiconductor process, comprises grains in stack of graphene sheets.

KIM S, BYUN K, CHO Y, SHIN K, LEE E, LEE C, SONG H, SHIN H, YOON J, LEE S, LIM H, BYUN K E, CHO Y C, SHIN K W, LEE C S, SONG H J, SHIN H J, SU Y J, LEE S Y, LIM H S, LI Z, YOUN J, SHEN X, LI C, LI Y, ZHAO L, JIN S

Method for preparing graphene metal composite material useful in field of alloy preparation for electrical, mechanical, and thermodynamic applications, comprises e.g. growing graphene on surface of metal material, heating, and applying pressure to metal material grown with graphene.

QU Y, TAN H, WANG W, SHEN D

Preparing graphene copper composite material useful in supercapacitors and motor drive devices, comprises e.g. pre-setting multi-layer copper foil in hot pressing chamber, adopting chemical vapor deposition, preparing graphene film on copper foil surface, and sintering graphene-copper.

GONG M, ZHAO M, LI M, CHEN C, CHEN Q, YANG W, LI Y, WANG Y, LIU B, PEI Z, ZHANG X, LIANG J

Preparation method of copper-based graphene, involves removing copper-based graphene precursor from impurities by solvent separation method, and drying copper-based graphene precursor to form copper-based graphene finished product.

WU G, QIAN T, CAO H, MA Y, SHEN H