国家/地区 台湾（3）
IPC部 C（3） H（2）
IPC大类 C01（3） C23（3） H01（2）
IPC小类 C01B（3）
IPC C23C016/26（3）
发明人 HUANG K（2）
公开年
申请年
专利权人 IND TECHNOLOGY RES INST（3）

Forming graphene on flexible substrate, involves providing polymer substrate including metal structure, carbon source and carrier gas, and subjecting polymer substrate to plasma enhanced chemical vapor deposition process.

TSENG C, LIN C, YEH N, LEU C, LU C

Processing method for growing metal-doped graphene, involves performing plasma enhanced chemical vapor deposition process with carbon precursor, metal precursor, and predetermined element precursor to form metal-doped graphene.

HUANG K, CHI Y, JI Y

Method for forming e.g. multi-layered graphene layer deposited on glass substrate, involves utilizing microwave with electron cyclotron resonance mechanism to excite carbon-containing gas to deposit graphene layer on substrate.

HUANG K, CHANG C, HSIEH Y, CHIU P, MEDINA H, QIU B, XIE Y, ZHANG Z, MEDIONA H, HUANG K P, CHANG C C, HSIEH Y T, CHIU P W