国家/地区 中国（5）
IPC部 C（5）
IPC大类 C23（5） H01（2）
IPC小类 C23C（5） H01L（2）
IPC C23C016/26（5）
发明人 WANG C（5）
公开年 2016（5）
申请年 2016（3）  2015（2） 
专利权人 SHANGHAI ADV.（3） LIAONING ADV.（2） SHENYANG INS.（2）

Method for preparing nitrogen-doped graphene film, involves introducing gas carbon source under condition of high temperature so as to form nitrogen-doped graphene film by carbon deposition.

FANG X, CAI W, WANG C, CHEN X, YANG L

Preparation of boron-doped graphene film comprises placing substrate in dual temperature zone system, then boron carbon solid source within dual temperature zone system and heating.

FANG X, CHEN X, WAN J, WANG C, YOU Y, XU Y

Power generation thin film device comprises stainless steel plate, metal electrode, conductive graphene thin film, polyvinylidene fluoride piezoelectric thin film, and another metal electrode, and another conductive graphene thin film.

DU S, GAO K, HE Y, LI N, LIN S, LIU C, WANG C, ZHANG D, YU J, SONG J

Pressing-type power generation thin film device for vehicle, has stainless steel plate, aluminum electrode, electric conduction graphene thin film and PTFE piezoelectric thin film that are arranged in sequence from bottom to upper layer.

DU S, GAO K, HE Y, LI N, LIN S, LIU C, SONG J, WANG C, YU J, ZHANG D

Preparation of graphene thin film, involves providing copper foil, electrochemically etching surface of copper foil, and growing graphene thin film by chemical vapor deposition on surface of copper foil.

CAI W, FANG X, CHEN X, WANG C