国家/地区 日本（3）
IPC部 C（3）
IPC大类 C23（3） H01（3） C01（2）
IPC小类 C23C（3） C01B（2） H01L（2）
IPC C23C016/26（3）
发明人 IFUKU R（2） MATSUMOTO T（2） WADA M（2）
公开年 2023（3）
申请年 2022（2） 
专利权人 TOKYO ELECTR.（2）

Film forming method involves loading substrate into processing container, forming interface layer having amorphous structure or microcrystalline structure on substrate by plasma of first mixed gas including carbon-containing gas and forming graphene film on interface layer.

NAKAMURA G, TERADA H, MATSUMOTO T, KABUKI N, WADA M, IFUKU R, NAKAMURA K, KAMURAGI N

Processing substrate involves carrying substrate having silicon-containing film on surface of substrate into processing container, forming adsorption layer, forming silicon oxide layer, and forming graphene film on silicon oxide layer by supplying carbon-containing gas into processing container.

FURUYA H, YAMADA H, IFUKU R, MATSUMOTO T, WADA M, HARUHIKO F A

Electrical connection component for e.g. electric contact, comprises base material and nanocarbon material film composed of graphene laminated material formed by laminating two layers of graphene single layer materials.

KITANO A, SHIMIZU T, KUBO T