国家/地区 美国（3）
IPC部 B（3）
IPC大类 C23（3） B32（2） B82（2）
C01（2） C30（2）
IPC小类 C23C（3） B32B（2） B82Y（2）
C01B（2） C30B（2）
IPC C23C016/32（3）
发明人
公开年
申请年
专利权人

Formation of two-dimensional silicon carbide used as wide band gap semiconducting material in electronic applications, involves preparing solution comprising silicon carbide particles and solvent, ultrasonically processing solution, and centrifuging to extract two-dimensional silicon carbide.

CHABI S

Process for forming high surface area graphene structure of super-capacitor used with battery, involves removing silicide regions to provide silicon carbide structure having highly irregular surface and surface layer of graphene.

AHMED M, IACOPI F

Nanosheet used in applications e.g. superconductors, capacitors comprises silicon carbide layer having first and second surfaces; a first graphene layer formed of specific graphenes; and a second graphene layer formed of specific graphenes.

CHEN K, HU M, KUO C, CHEN L, CHEN K H, HU M S, KUO C C, CHEN L C