国家/地区 中国（3）
IPC部 C（3）
IPC大类 C23（3）
IPC小类 C23C（3） C01B（2） H01L（2）
IPC C23C016/26（3）
发明人
公开年 2021（3）
申请年 2021（3） 
专利权人

Conductive structure, comprises conductive material layer including metal and work function control layer including two-dimensional material with defect, to control work function of conductive structure.

LEE C, KIM C, LEE E, BYUN K, KIM S, SHIN H, SHIN H J, BYUN K E, LEE C S, LI C, JIN C, LI Y, JIN S, SHEN X

Encapsulating graphene in semiconductor substrate, comprises selectively depositing graphene on metal layer, depositing metal oxide over graphene by thermal-based deposition technique, and depositing hermetic barrier over metal oxide.

VARADARAJAN B N, NARKEVICIUTE I, SHARMA K

Determining optimal ratio of metal atoms in two-dimensional material growth alloy catalyst comprises e.g. forming first metal catalyst layer, forming second metal catalyst layer, and annealing to fuse first and second metal catalyst layers.

CHENG C, LI L, CHEN H, HUANG B