国家/地区 韩国（4）
IPC部 C（4）
IPC大类 C01（4） C23（4）
IPC小类 C01B（4）
IPC C01B031/02（4）
发明人
公开年 2013（4）
申请年 2012（3） 
专利权人

Chemical vapor deposition system used for manufacturing graphene, comprises cooling portion which cools grapheme, graphene combiner which synthesizes graphene by chemical vapor deposition, and material supply portion.

NA D H

Film-forming apparatus for forming graphene film on film-forming target e.g. metallic foil, has roll-to-roll mechanism which provides tensile force relaxation unit that relaxes tensile force applied to transported film-forming target.

KOBAYASHI T, SHIMIZU K, KADONO K, MIZUGUCHI Y, MURAKAMI Y, MIZUKUCHI Y, SUMINO K

System, used to prevent corrosion of metals e.g. lithium, comprises a graphene layer formed on a metallic layer, where the metallic layer including a first metal and a second metal that are dipped in a metal solution.

CHAE S J, CHOI J Y, FETHULLAH G, LEE Y H, SHIN H J, YAO F

Pre-processing method of catalyst metal layer during formation of graphene, involves activating catalyst metal layer by applying plasma of process gas containing reducible gas and nitrogen-containing gas to catalyst metal layer.

MATSUMOTO TAKASHI, MATSUMOTO T