国家/地区 中国（7）
IPC部 C（7）
IPC大类 C23（7）
IPC小类 C23C（7）
IPC C23C016/455（7）
发明人 LIU T（2）
公开年 2023（7）
申请年 2022（5） 
专利权人

Preparation of cobalt-based composite material used in lithium battery negative electrode material, involves performing discharge plasma sintering treatment to cobalt antimonide and graphitized carbon powder, ball-milling, and depositing non-metal semiconductor material layer on obtained material.

XU Y, WANG X, LIU T

Gas pipeline for transmitting process gas from gas supply source to reaction chamber of semiconductor device, has first section and third section that are respectively provided with first heating unit and second heating unit capable of independently controlling temperature.

YIN N

Depositing polystyrene microspheres by selecting substrate for polystyrene microsphere deposition, placing substrate on substrate in reaction chamber of atomic layer deposition instrument, vaporizing diethyl zinc, ultrasonically dispersing and soaking substrate in polystyrene microsphere suspension.

GENG Z, PU J, CAO Q, DU J, XU X, ZHANG H, GUAN C

Depositing high-quality aluminum oxide thin films on surface of graphene comprises cleaning graphene substrate and adding into atomic layer deposition chamber, passing water molecules into atomic layer deposition chamber for pretreatment, obtaining required film and cooling.

LI N, LU W, LIU T, ZHANG Y, FAN T, XIA Y, WU S, TANG C, QU F

Photoanode used for photoelectrochemical decomposition of water and oxygen evolution, comprises base layer, dielectric passivation layer and sandwich composite layer arranged in sequence.

GONG J, XIE G

Box type negative-pressure roll-to-roll preparation device, has protective gas and carbon source supply mechanism connected with box body to introduce carbon source and protective gas into box body.

WU Q, SONG S, MA Y

Preparing confinement structure composite material comprises forming nanoporous material layer of first material and second material filled in nanopore, so that nanopores form hydrophilic or hydrophobic confinement space.

XU W, ZHANG Q, CHEN B, XIAO X