国家/地区 日本（3）
IPC部 C（3） H（2）
IPC大类 C01（3） C23（3） H01（2）
IPC小类 C01B（3）
IPC C23C016/26（3）
发明人 MATSUMOTO T（3） IFUKU R（2） KABUKI N（2）
WADA M（2）
公开年
申请年
专利权人 TOKYO ELECTRON LTD（3）

Film forming method involves loading substrate into processing container, forming interface layer having amorphous structure or microcrystalline structure on substrate by plasma of first mixed gas including carbon-containing gas and forming graphene film on interface layer.

NAKAMURA G, TERADA H, MATSUMOTO T, KABUKI N, WADA M, IFUKU R, NAKAMURA K, KAMURAGI N

Film forming by cleaning interior of treatment container, extracting and removing oxygen inside treatment container, introducing substrate into treatment container, and forming carbon film on substrate by plasma chemical vapor deposition.

MAKOTO W, TAKASHI M, NOBUTAKE K, RYOTA I, MASAHITO S, HIROKAZU U, MATSUMOTO T, KABURAGI N, IFUKU R, SUGIURA M, UEDA H, WADA M, KABUKI N

Pre-processing method of catalyst metal layer during formation of graphene, involves activating catalyst metal layer by applying plasma of process gas containing reducible gas and nitrogen-containing gas to catalyst metal layer.

MATSUMOTO TAKASHI, MATSUMOTO T