国家/地区 中国（4） 世界知识产权组织（2）
IPC部 C（4）
IPC大类 C23（4）
IPC小类 C23C（4） C01B（2）
IPC C23C016/26（4）
发明人
公开年 2012（2）
申请年 2012（4）
专利权人

Preparing graphene thin layer on the surface of metal catalyst involves reacting carbon source and metal catalyst substrate in presence of hydrogen and argon so as to perform carburization reaction.

GAO S, GENG X, GONG Y, LIU L, LONG M, ZHANG X, ZHU C

Method for preparing graphene using thin-film chemical vapor deposition device, involves connecting quartz tube with charging system, air pressure regulator and vacuum system by flange, and surrounding quartz tube by heating furnace.

LIAN R, LIU C

Manufacture of graphene on silicon carbide substrate involves producing double-layer carbon membrane, depositing nickel film on silicon substrate, placing carbon surface of double-layer carbon membrane on nickel membrane, and annealing.

DENG P, GUO H, LEI T, ZHANG K, ZHANG Y

Method for growing graphene through chemical vapor phase deposition, involves using poly-benzene ring aromatic hydrocarbons as carbon source and using carbon source decomposition method or spin-coating method of carbon source.

DING G, JIANG M, SHEN H, SUN L, TANG S, WU T, XIE X