国家/地区 中国（3） 美国（2）
IPC部 C（5）
IPC大类 C23（5） C01（2）
IPC小类 C23C（5） C01B（2）
IPC C23C016/52（5）
发明人
公开年 2023（5）
申请年 2022（5）
专利权人

Graphene carbide/silicon carbide composite material used in electromagnetic shielding device, comprises multiple graphene of silicon carbide crystal grains uniformly distributed to form thin film.

LI Z, ZHANG L, TU R, XU Q, ZHANG S

Gas pipeline for transmitting process gas from gas supply source to reaction chamber of semiconductor device, has first section and third section that are respectively provided with first heating unit and second heating unit capable of independently controlling temperature.

YIN N

Process for instantiating elemental metal within ultramicro pore of nanoporous carbon powder composition involves initiating gas flow in reactor assembly, reactor chamber containing nanoporous carbon powder, first porous frit, second porous frit, reactor head space, and computer processing unit.

BRODEUR C L, NAGEL C J

Negative-pressure roll-to-roll preparation device for preparing graphene copper material, comprises pipeline, pay-off mechanism, take-up mechanism, heating mechanism, protective gas and carbon source supply mechanism, and valves.

WU Q, SONG S, MA Y

Formation of graphene layer for semiconductor device, involves exposing substrate comprising conductive and dielectric materials to plasma to clean conductive material, and exposing substrate to another plasma to form graphene layer.

MEBARKI B, CHUA T C, VALENCIA C W, LEE J J, TANG X, CHEN X