国家/地区 中国（5）
IPC部 B（5）
IPC大类 B82（5）
IPC小类 B82Y（5） C23C（5） C01B（4）
H01L（2）
IPC B82Y030/00（5）
发明人
公开年 2013（2）
申请年
专利权人

Preparation method of two-dimensional (2D) nanometer tungsten disulfide semiconductor film, involves placing ceramic boat in central position of high temperature constant temperature zone in tubular furnace respectively.

ZHANG L

Composite structure of graphene and carbon nanotube configured in a three-dimensional form used in electrodes, comprises graphene platelets, metal particles coated on graphene platelets, and carbon nanotubes formed on metal particles.

WU M Y, HSIEH C, PENG C, WU Y, XIE C, HSIEH C Y, PENG C S

Method for forming film of graphene involves placing substrate in processing chamber at reduced pressure, performing surface treatment process on portion of substrate, and providing carbon-containing material in processing chamber.

BOYD D A

Apparatus for growing carbon nanostructure i.e. graphene, on fiber for current carbon nanotube synthesis technique, has substrate inlet sized before growth zones to allow spoolable length substrate to pass through growth zones.

MALECKI H C, DAHNE J L, LOEBACH J P, GAIGLER R L, LEDFORD J T, MALECKI H, DAHNE J, LOEBACH J, GAIGLER R, LEDFORD J

Manufacture of graphene on silicon carbide substrate involves producing double-layer carbon membrane, depositing nickel film on silicon substrate, placing carbon surface of double-layer carbon membrane on nickel membrane, and annealing.

DENG P, GUO H, LEI T, ZHANG K, ZHANG Y