国家/地区 中国（2） 韩国（2） 美国（2）
IPC部 C（4）
IPC大类 C25（4）
IPC小类 C25D（4）
IPC C25D009/04（4）
发明人
公开年 2018（4）
申请年 2016（2）  2017（2） 
专利权人

Preparing metal oxide-doped graphene used for field effect transistor, and in p-type semiconductor, comprises e.g. depositing graphene on first substrate, and transferring deposited graphene onto second substrate to form graphene electrode.

KYU K E, SOO P C

Preparation of graphene carbon nanotubes composite film for hybrid Schottky diode, involves using substrate whose entire or one surface is graphene catalyst, performing electroplating and carrying out chemical vapor deposition.

YANG L, CHEN Z, XU X, ZHANG J, YIN L, WU H, LIAO W, LI Q, BECK T J

Oxygen generation catalyst useful in an electrochemical or photoelectrochemical device, comprises a graphene oxide layer, and a nickel-iron layered double hydroxide layer supported on the surface of the graphene oxide layer.

YAMADA A, MIKOSHIBA S, ONO A, KUDO Y, TAMURA J, KITAGAWA R, TSUTSUMI E, YAMAGIWA M, SUGANO Y, MOTOSHIGE A, KANNO Y, TAMURA A

Production of graphene used in e.g. sensor, involves exfoliating working electrode of electrochemical cell containing aqueous electrolyte comprising exfoliating ions, to produce graphene having specified engineered characteristics.

CHAKI N K, DAS B, DEVARAJAN S, SARKAR S, RAUT R, SINGH B, PANDHER R, KHASELEV O, DIFFARAJAN S, LAUT R, PANDE R, COSERLEF O