国家/地区 中国（2）
IPC部 C（3） H（2）
IPC大类 C30（3） H01（2）
IPC小类 C30B（3）
IPC C30B023/02（3）
发明人
公开年 2021（3）
申请年 2021（2） 
专利权人

Preparing cerium-doped topological insulator bismuth telluride single crystal thin film involves using cerium source, bismuth source and tellurium source as evaporation source, degassing substrate, and transferring substrate.

TENG P

Producing epitaxial structure useful in flexible electronic device comprises providing multilayer graphene layer having through-holes, providing single crystal substrate having graphene layer formed and growing semiconductor structure.

HONG Y, JUNG J S, JUNGJOONSUCK

Growing single crystal gallium nitride film on arbitrary self-supporting substrate involves nitride deposition on any self-supporting substrate, transferring the two-dimensional material with single crystal hexagonal structure.

YANG X, SHEN B, LIU D, SHEN J, CAI Z, CHEN Z, MA C