国家/地区 中国（3）
IPC部 C（3）
IPC大类 C30（3）
IPC小类 C30B（3）
IPC C30B025/14（3）
发明人 WANG L（3）
公开年 2013（2）
申请年 2013（2） 
专利权人 UNIV NANCHAN.（2）

Method for preparing liquid copper substrate utilized for preparing large single crystal graphene in field effect transistor device, involves placing solid copper on copper-tungsten alloy substrate, and heating in hydrogen atmosphere.

LIU Y, WU B, WANG L, YU G, CHEN J

Single-crystal graphene preparation device has heating device that is located in cavity whose two sides are provided with air inlet and air outlet connected with one end of exhaust pipe whose other end is connected with vacuum pump.

WANG C, WANG L

Preparing large size single crystal graphene comprises depositing organic gas, hydrogen gas and inert gas on metal surface of a large size single crystal graphene under a specific pressure in a flow field.

WANG C, WANG L