国家/地区 欧洲专利局（EPO）（3）
IPC部 B（3）
IPC大类 C01（3）
IPC小类 C01B（3） C30B（3） B82Y（2）
C23C（2）
IPC C01B031/04（3）
发明人
公开年
申请年
专利权人

Manufacture of monocrystal graphene film for semiconductor device, involves forming polycrystalline graphene on substrate using hydrocarbon gas, growing graphene film, forming catalyst, heating and recrystallizing.

HWANG C, HWANG C Y

Producing two-dimensional nanomaterial (graphene) by chemical vapor deposition, used in e.g. display, comprises contacting substrate with flow of hydrogen and flow of precursor such that precursor forms material on surface of substrate.

GROBERT N, MURDOCK A T, KOOS A A

Manufacturing graphene, comprises performing vapor phase epitaxy on substrate comprising silicon carbide surface, and controlling sublimation of silicon from the substrate by flow of e.g. inert gas (argon) through epitaxial reactor.

STRUPINSKI W, STRUPIAFSKI W, STRUPINSKI W O