国家/地区 中国（3）
IPC部 C（3）
IPC大类 C30（3）
IPC小类 C30B（3）
IPC C30B025/18（3）
发明人
公开年 2019（3）
申请年 2019（2） 
专利权人

Preparing epitaxial growth of metal organic framework surface by matching two-dimensional material templates with lattice symmetry involves using e.g. graphene single crystal, graphene thin film, graphene nanosheets, methane, and hydrogen.

SUN Z, HU A

Preparation of wafer-level graphene single crystal involves placing plasma-processed metal foil in reaction furnace, heating, introducing hydrogen, annealing, introducing carbon source, adjusting annealing temperature and cooling.

HUANG F, CHENG Y, BI H

Growing large mismatched indium gallium arsenide material involves covering layers of graphene on mismatched substrate, placing in growth chamber of gaseous source molecular beam epitaxy system, introducing arsine and pyrolyzing.

GU Y, WANG H, ZHANG Y, SHAO X, LI X, GONG H