国家/地区 中国（3）
IPC部 C（3）
IPC大类 C23（3）
IPC小类 C23C（3）
IPC C30B025/18（3）
发明人 LV J（3）
公开年 2012（2）
申请年 2012（2） 
专利权人 UNIV XIDIAN（3）

Method for growing gallium nitride/graphene-based magnetron sputtering aluminum nitride during manufacture of device, involves transferring monolayer graphene on aluminum oxide substrate, sputtering aluminum nitride, and heat-treating.

CHEN Z, HAO Y, ZHANG J, LV J, XU S, NING J, REN Z, WANG D, LIN Z

Formation of graphene on 3C-silicon carbide substrate involves carbonizing silicon substrate, forming carbon film, carrying out heteroepitaxial film growth, reducing, reacting with carbon tetrachloride, and annealing.

DENG P, GUO H, LEI T, LV J, ZHANG K, ZHANG Y

Manufacture of large-area graphene used for sealing gas and liquid, involves adding hetero-epitaxy film to quartz tube, heating, adding mixed gas of argon and chlorine, generating carbon layer, and annealing.

DENG P, GUO H, LEI T, LV J, ZHANG K, ZHANG Y