国家/地区 美国（3）
IPC部 C（3）
IPC大类 C30（3） C01（2）
IPC小类 C30B（3）
IPC C30B029/02（3）
发明人 BARKER D L（2） OWENS W R（2）
公开年 2011（2）
申请年 2010（3）
专利权人 RAYTHEON CO（2）

Forming in-situ engineered defects in graphene, comprises manipulating surface of single crystal region having hexagonal crystal lattice on a substrate to create non-planar features and epitaxially forming layer of carbon atoms on surface.

BARKER D L, ZELINSKI B J, OWENS W R

Making isotopically enriched graphene, comprises e.g. accelerating ion beam with an electric field towards substrate; and using magnetic or electric field generating devices to separate the ion beam into many component ion beams.

BARKER D L, OWENS W R, BECK J W

Manufacture of graphene thin film used in metal oxides window electrodes for solid-state solar cells involves disposing catalyst thin film on back support substrate, introducing hydrocarbon, and heating to promote graphene growth.

VEERASAMY V S, VEERASAMY V