国家/地区 中国（3）
IPC部 B（3）
IPC大类 C30（3） H01（3） B82（2）
IPC小类 C30B（3） H01L（3） B82Y（2）
IPC C30B033/02（3）
发明人
公开年
申请年
专利权人

Preparing high-quality third-fifth compound substrate used in photoelectronic device, photoelectric integration, ultra-high-speed microelectronic device, involves providing third group metal-organic source mixed precursor.

WANG G, YAN Q

Manufacturing substrate material useful for graphene growth, comprises e.g. cutting sapphire crystal, forming sapphire plate blank, grinding sapphire sheet blank to form sapphire sheet semifinished product, and chamfering sapphire sheet.

ZHOU Z, YANG L, SHI M, LI Z

Hexagonal boron nitride substrate used for manufacturing graphene nano belt used in electronic device, consists of boron nitride substrate layer and single atom layer.

DING G, JIANG M, TANG S, XIE X