国家/地区 中国（5）
IPC部 C（5）
IPC大类 C07（5）
IPC小类 H01L（5） C07C（4） C01B（3）
B82B（2） B82Y（2） C07D（2）
IPC H01L051/05（5）
发明人 CHANG X（2） GUO X（2） HINTERMANN T（2）
JIA C（2） LI P（2）
公开年 2022（2）
申请年 2021（2） 
专利权人 BASF SE（2） BEIJING WEIM.（2） UNIV NANKAI（2）

New diamine compound with quantum interference effect, used in preparation of single-molecule field effect transistor.

CHANG X, WANG B, JIA C, LI P, GUO X

New plane conjugated molecular compound used in single-molecule field-effect transistor comprising graphene gate electrode layer, bismuth selenite dielectric bottom layer, and hexagonal boron nitride dielectric top layer.

CHANG X, JIA C, ZHANG M, LI P, GUO X

Purifying graphene nanoribbons, involves contacting composition comprising graphene nanoribbons and contaminants with liquid medium comprising dispersant, and dispersing nanoribbons in liquid medium and subjecting the dispersion.

HINTERMANN T, SCHWAB M G, CHA K C, WEITZ T, SCHAEFER A, MUELLER I B, WEITZE T, SCHWAB M G S, CHA K C P

Edge-halogenation of graphene material used for electronic/optical/optoelectronic device involves reacting graphene material e.g. graphene, graphene nanoribbon, and/or graphene molecule with halogen-donor compound in presence of Lewis acid.

HINTERMANN T, MUELLEN K, FENG X, TAN Y, MULLEN K, TAN Y Z

New graphene comprising a structure of carbon atoms partially substituted with boron atoms and nitrogen atoms, where the graphene has a band gap, useful in a channel of a transistor.

LEE S, SEO S, WOO Y, CHUNG H, HEO J, LEE S H, SEO S A, WOO Y S, CHUNG H J, HEO J S, HUN L S