国家/地区 美国（4） 韩国（3） 世界知识产权组织（3） 加拿大（2） 欧洲专利局（EPO）（2）
IPC部 B（4）
IPC大类 C01（4）
IPC小类 C01B（4） C23C（4） B05D（3）
B82Y（3） B32B（2）
IPC C01B031/04（4）
发明人
公开年 2013（3）
申请年 2012（4）
专利权人

Fabricating graphene, comprises depositing graphene seed layer on substrate of base layer, depositing catalyst metal layer on substrate and graphene seed layer and introducing carbon atom to graphene seed layer.

PATIL V

Fabricating graphene structures, comprises fabricating a crystalline graphene layer on a surface, and subsequently decreasing crystallographic disorder of crystallographically disordered edges by heating crystalline graphene layer.

ARNOLD M S, GOPALAN P, SAFRON N S, KIM M, UNG K M

Making graphene film comprises providing copper foil, placing foil in microwave plasma chemical vapor deposition chamber, evacuating chamber, providing hydrogen gas to chamber, exposing foil to plasma, and providing methane gas to chamber.

FISHER T S, KUMAR A

Manufacture of multilayer graphene-coated substrate used as e.g. transparent conductive film and electroconductive film, involves laminating multilayer graphene obtained from multilayer graphene assembly on surface of substrate.

MURAMATSU K