国家/地区 世界知识产权组织（4）
IPC部 B（4）
IPC大类 B82（4）
IPC小类 C01B（4）
IPC B82B003/00（3） C01B031/02（2）
发明人 DAVIS M A（4）
公开年 2014（4）
申请年 2014（4）
专利权人 DAVIS M A（4）

Forming a graphene device, used to fabricate electronic device, comprises e.g. patterning a substrate to form many elements and trenches on substrate, and segmentedly overlaying a carbon source and initiating material on each element.

DAVIS M A

Forming graphene device includes creating foundation material on substrate having crystallographic or amorphic state, causing the material to adopt favored crystallographic or amorphic state and forming first graphene stack in first region.

DAVIS M A

Forming graphite based structure on substrate comprising many zones, used in e.g. solar cells, comprises doping first zone with carbon in accordance with many dopant profiles and generating graphene sublayers by heating.

DAVIS M A

Fabricating multilevel stacked graphene structure used in e.g. storage comprises forming graphene level with graphene stack, depositing interlayer and forming other graphene level with stack, where stack forms graphene based nanostructures.

DAVIS M A