国家/地区 日本（2）
IPC部 B（3）
IPC大类 B01（3）
IPC小类 B01J（3） C23C（3） C30B（3）
C01B（2）
IPC B01J023/755（3）
发明人
公开年 2022（2）
申请年
专利权人

Metal catalyst layer used for producing graphene, laminated and crystallized on c-plane of substrate having corundum structure, having face-centered cubic structure.

NARUTSUKA S, NAKAJIMA R

Synthesizing two-dimensional transition metal oxide layers by providing sputter chamber having inert atmosphere, depositing transition metal on substrate in sputter chamber, withdrawing substrate from chamber, placing substrate on pre-heated plate, and placing target substrate on ceramic plates.

DASH J K, ABZAL S M, KALYAN K, JANGA S L

Method of growing graphene for electronic device involves forming metal film on single crystal silicon, reacting single crystal silicon and part of metal film, and epitaxially growing metal silicide film on single crystal silicon.

HAYASHI K