国家/地区 美国（9） 世界知识产权组织（5） 中国（4） 韩国（4） 日本（3）
IPC部 B（12）
IPC大类 C30（12）
IPC小类 C30B（12） B82Y（9） C01B（8）
B32B（4） C23C（4） B01J（3）
H01B（3） H01L（3） B05D（2）
B22F（2） H05K（2）
IPC B82Y040/00（9） C30B029/02（8） B82Y030/00（7）
C01B031/02（6） C01B031/04（6） C30B025/18（4）
C30B025/02（3） C30B029/60（3） B22F001/00（2）
B22F009/24（2） B32B009/00（2） C01B032/186（2）
C23C016/455（2） C30B029/52（2） H01B001/04（2）
发明人 MA S（2） MA T（2） PAN G（2）
SUN G（2）
公开年 2014（12）
申请年 2013（5）  2014（4）  2012（3） 
专利权人 UNIV BEIJING.（2） UNIV BEIJING.（2）

Graphene film used in an electrode is obtainable by epitaxially growing metal layer on surface of substrate, peeling off the metal layer, and depositing graphene onto surface of metal layer.

WODTKE A, YU H K, ALEC W, HAK KI Y, YU H, YUK H K, YUK H

Functionalizing epitaxial graphene sample surface for atomic layer deposition of dielectric in reactor, involves subjecting sample to ex situ functionalization step and sample having hydroxyl-terminated surface to in situ treatment cycle.

GARCES N, WHEELER V D, GASKILL D K, EDDY C R, JERNIGAN G G

Cubic phase cobalt/graphene composite material used as absorbing material, has monocrystalline structure, and comprises metal cobalt as face-centered cubic structure, and graphene as sheet-shaped structure.

MA S, MA T, PAN G, SUN G

Hexagonal phase cobalt-graphene polycrystalline composite material used as shielding material has stacked closely-packed cobalt and graphite sheets.

MA S, MA T, PAN G, SUN G

Manufacture of graphene laminated structure used for electronic device, involves plasma-treating surface of hexagonal boron nitride sheet, depositing hexagonal boron nitride sheet on graphene sheet, and forming insulating layer.

KIM S, HAN S, HAN S A, KIM S W

Growing graphene used e.g. in graphene material, comprises annealing metal substrate up to growth temperature for annealing time period and in presence of non-reducing gas, and introducing gas mixture to grow graphene over the substrate.

DUAN X, ZHOU H

Nanosynthesis apparatus, useful for nanosynthesizing graphene, comprises outer tube having internal surface, inner tube partially disposed within outer tube, deposition fluid source in fluid communication with gap, and heater.

HART A J, POLSEN E

Unitary graphene layer or graphene single crystal useful for heat-spreading applications e.g. as a heat spreader or a heat sink product in e.g. hand-held device comprises closely packed and chemically bonded parallel graphene planes.

ZHAMU A, WANG M, XIONG W, JANG B Z

Method of growing graphene for electronic device involves forming metal film on single crystal silicon, reacting single crystal silicon and part of metal film, and epitaxially growing metal silicide film on single crystal silicon.

HAYASHI K

Manufacturing graphene involves preparing a carrier member on which the graphene is formed on one surface, exposing the graphene to dopant vapor, transferring the doped graphene onto a target member, and removing the carrier member.

YOON J, YOON J H