国家/地区 韩国（3） 日本（2） 美国（2）
IPC部 B（3）
IPC大类 B32（3）
IPC小类 B32B（3）
IPC C01B031/02（3）
发明人 LEE S（3）
公开年 2013（2）
申请年 2012（3）
专利权人

Producing a doped graphene, used in e.g. auxiliary electrode, comprises forming doped graphene layer, positioning support layer, removing metal layer, adding dopants and positioning substrate layer and then removing support layer.

RHO J, LEE S, JUNG M, MOON J, SEO B, PARK W

Graphene paper, useful in e.g. a thin-film electrode, comprises a reduced graphene oxide layer, and a coating layer formed by coating the reduced graphene oxide layer with a polymer comprising substituted ethyl-benzene compounds.

LEE W, LEE J U, YI J, LEE S, BYUN J, KIM B, YI J W, LEE S B, BYUN, KIM B S, BOK L S, HYEONG B J, O L W, SEON K B, UK L J, U LEE J, BYUN J H

Method for forming graphene pattern using exfoliation technique, involves selectively peeling graphene layer by polymer stamp, and forming raised pattern on rotator polymer stamp, where polymer stamp is made of polydimethylsiloxane.

AN K, CHUNG T, JUNG D, KIM C G, KIM H S, LEE S S, LEE Y K, AN K S, CHUNG T M, LEE S, LI Y, KIM C, KIM H