国家/地区 美国（6） 世界知识产权组织（5） 欧洲专利局（EPO）（4） 韩国（4） 日本（3） 中国（2）
IPC部 B（6）
IPC大类 C01（6）
IPC小类 C01B（6）
IPC C01B031/04（6）
发明人
公开年 2015（6）
申请年 2014（3）  2013（2） 
专利权人

Manufacture of metal-containing graphene hybrid composite for forming electrode, involves mixing acid solution, metal salt containing metal ions and oxidized graphene, reducing resultant mixture and supporting reduced product.

LEE H, YOON Y

Formation of graphene scroll for synthesizing graphene article, involves annealing catalyst substrate in hydrogen gas, exposing substrate to reaction gas mixture, detaching substrate from graphene and consolidating synthesized graphene.

VLASSIOUK I V, IVANOV I N, DATSKOS P G

Manufacture of monocrystal graphene film for semiconductor device, involves forming polycrystalline graphene on substrate using hydrocarbon gas, growing graphene film, forming catalyst, heating and recrystallizing.

HWANG C, HWANG C Y

Coated strip or sheet comprises steel strip or sheet, zinc (alloy) coating on steel strip or sheet, coating system for inhibiting corrosion, and top coat in which coating system contains corrosion inhibitive composition with graphene.

VAN DER WEIJDE D H, BOEHM S, BOEHM H L M, BOEHM H, VAN DER WEIJDE D, BOHM H L M, BOHM S

Formation of binder-free hybrid carbon nanotube and graphene nanostructure for energy devices, involves forming on substrate, depositing catalyst particles and growing nanotubes on graphene layer using ethylene/hydrogen mixture.

WANG W, GUO S, OZKAN C S, OZKAN M

Production of uniformly-doped large area multi-layered graphene element used for display/screen of electric/electronic device, involves forming openings in graphene sheet, and holding graphene element and dopant at elevated temperature.

RUSSO S, CRACIUN M, BOINTON T H