国家/地区 美国（5）
IPC部 B（5）
IPC大类 C04（5）
IPC小类 C04B（5）
IPC B01J003/06（2） B82Y030/00（2） B82Y040/00（2）
C01B021/064（2） C01B031/04（2） C23C016/02（2）
发明人
公开年 2021（3）
申请年 2020（2） 
专利权人

Formation of two-dimensional silicon carbide used as wide band gap semiconducting material in electronic applications, involves preparing solution comprising silicon carbide particles and solvent, ultrasonically processing solution, and centrifuging to extract two-dimensional silicon carbide.

CHABI S

Composition used for manufacturing composite polycrystalline diamond, comprises diamond particle(s), boron-doped diamond particle(s), and preset amount of additive containing boron oxide powder, and nano-carbon material.

CHEN W, PAN P, SUN Y

Sp2-sp3 hybrid crystalline boron nitride has basic structural unit composed of sp2 hybridized graphite-like structural unit and sp3 hybridized diamond-like structural unit, where the two types of units are connected via coherent interface.

ZHAO Z, LUO K, SUN L, LIU B, HU W, HE J, YU D, TIAN Y, XU B, LIU Z, ZHAO Z S, HU W T, HE J L, YU D L, TIAN Y J, LIU Z Y

Substrate for graphene growth, has glass-ceramic body, and multiple metallic islands that is disposed on surface of glass-ceramic body.

BORRELLI N F, FEKETY C R, LIU X, SONG Z

Hexagonal boron nitride substrate used for manufacturing graphene nano belt used in electronic device, consists of boron nitride substrate layer and single atom layer.

DING G, JIANG M, TANG S, XIE X