国家/地区 中国（4）
IPC部 B（4）
IPC大类 C01（4） B82（3） C23（2）
IPC小类 C01B（4）
IPC C01B031/04（4）
发明人 WANG C（4）
公开年 2012（2） 2015（2）
申请年 2014（2） 
专利权人

Method for modifying e.g. I-V characteristics, of graphene i.e. semiconductor film, involves placing graphene film in vacuum environment, and radiating graphene film with electron beam to obtain graphene material.

HUANG C, CHU C, CHIU S, WANG C, WEI C, CHUNG C, WU B, HUANG J, QIU S, WANG J, ZHU J, WEI J, ZHONG C, HUANG C H, CHU C W, CHIU S M, WANG C C, WEI C M, CHUNG C J, WU B H

Reduced graphene oxide/copper nanocomposite powder is obtained by reducing graphene oxide, sensitizing, activating, supporting copper uniformly on graphene, and obtaining powder having copper uniformly supported on graphene sheet layer.

HUANG J, LI M, JIANG X, LUO G, SHEN Q, WANG C, ZHANG L

Improving graphite interlayer distance, comprises placing the graphite oxide in a cobalt-60 irradiation source chamber, carrying out irradiation, and peeling a surface of the graphite oxide to obtain graphene nano-sheets.

CHEN G, CHEN L, GUO Q, QIAN X, WANG C, XU Z, ZHANG Y

Manufacture of graphene nano belt for electric component, involves preparing single atom layer and forming layer on insulating substrate, and directly growing.

CHEN J, DING G, JIANG M, TANG S, WANG C, XIE X