国家/地区 美国（4）
IPC部 C（4）
IPC大类 C23（4）
IPC小类 C23C（4） C01B（3） H01L（2）
IPC C23C016/26（4） C01B031/04（2） C01B032/186（2）
C23C016/00（2） C23C016/02（2） C23C016/50（2）
C23C016/505（2） C23C016/511（2） H01L021/02（2）
发明人 CHEN Z（2）
公开年
申请年
专利权人 PURDUE RES FOUND（4）

Production of low-temperature growing graphene used for semiconductor application, involves placing substrate, providing carbon precursor, generating plasma, and removing carbon atom and cobalt layer which is annealed after deposition.

CHEN Z, ZHANG S

Graphene deposition process for deposition of graphene on substrates, involves generating radio frequency plasma at location proximate to substrate, while flowing precursor gas containing carbon through plasma and over substrate.

CHEN Z, CHUGH S, MEHTA R

Method for growing graphene nano-petals on carbon fiber, involves providing cloth base with fibers that are not fully carbon, and growing graphene petals integrally on carbonized cloth base using same plasma process.

FISHER T, XIONG G

Making graphene film comprises providing copper foil, placing foil in microwave plasma chemical vapor deposition chamber, evacuating chamber, providing hydrogen gas to chamber, exposing foil to plasma, and providing methane gas to chamber.

FISHER T S, KUMAR A