国家/地区 中国（5）
IPC部 B（5）
IPC大类 B82（5） H01（5） C01（4）
C23（2）
IPC小类 B82Y（5） C01B（4） H01L（4）
B82B（2） C23C（2） H01B（2）
IPC B82Y010/00（5）
发明人
公开年 2012（4）
申请年 2012（5）
专利权人

Memory cell switch for reversibly opening and closing circuit, has ferroelectric material formed between graphene structure and conductive structure, where conductive structure provides switch into on and off states.

SANDHU G S, SANDHU G

Structure, useful in e.g. a graphene device e.g. a transistor, comprises a substrate, a growth layer, a graphene layer, and a protective layer, where the growth layer is disposed on the substrate and has a groove.

CHOI B, LEE E, WHANG D, CHOI B L, LEE E K, WHANG D M, CHOE P, HWANG T

Making graphene nanoribbon comprises contacting poly(phenylene ethynylene) polymer, annulating compound, and catalyst system comprising metal catalyst and protic acid, and oxidizing the arylannulated polymer product.

DICHTEL W R, ARSLAN H, URIBEROMO F J

Preparation of graphene nanobelt for microelectronic devices, involves injecting silicon ions into silicon carbide, pyrolyzing to form carbon film, depositing nickel film on substrate, placing carbon film on nickel film, and annealing.

GUO H, LEI T, ZHANG Y, ZHANG K, ZHANG F, ZHAO Y

Method for preparing graphene film or graphene material, involves preparation aqueous solution of water soluble biopolymer to form non-crystallizing hydrogels or derivative of biopolymer.

DELGADO SANCHEZ J M, SANCHEZCORTEZON E, ATIENZAR CORVILLO P, PRIMO ARNAU A M, GARCIA GOMEZ H, DELGADO S J M, SANCHEZ C E, ATIENZAR C P, PRIMO A A M, GARCIA G H, SANCHEZ CORTEZON E, SANCHEZ J M D, CORTEZON E S, CORVILLO P A, ARNAU A M P, GOMEZ H G