国家/地区 中国（4）
IPC部 C（4）
IPC大类 C01（4）
IPC小类 C01B（4）
IPC C01B032/188（4）
发明人 LI Y（4）
公开年 2018（3）
申请年 2017（4）
专利权人 55TH RES INS.（2）

Controllable step-shape pre-treatment of silicon carbide substrate useful in pyroletic preparation of graphene, comprises placing the cleaned silicon carbide substrate on a susceptor in a chemical vapor deposition CVD apparatus, and heating.

ZHAO Z, LI Y, WANG Y, LI Z

Preparing diamond micropowder surface in-situ growing graphene layer, involves adding deionized water and hydrofluoric acid solution per gram of diamond, where diamond of is placed in a plastic container, and added deionized water.

HUANG H, LIU Y, HU J, WANG Y, WU Y, SHI H, LI Y, WEN B

Method for increasing uniformity of epitaxial wafer of silicon carbide-pyrolytic graphene, by placing silicon carbide substrate on susceptor, pyrolyzing, filling reaction chamber with protective gas and taking out epitaxial wafer.

ZHAO Z, LI Y, WANG Y, LI Z

Growing large-domain graphene by using hexagonal boron nitride as a seed involves providing substrate, dissolving hexagonal boron nitride in solvent, and then stirring obtained mixture ultrasonically treating the boron nitride particles.

YU F, ZHANG J, YANG Z, SUN L, LI Y, CHENG X, ZHAO X