国家/地区 中国（3）
IPC部 C（3）
IPC大类 C23（3） C01（2）
IPC小类 C23C（3） C01B（2）
IPC C23C014/16（3）
发明人
公开年 2017（3）
申请年 2017（2） 
专利权人

Preparing large size and high quality graphene based on self-limiting nucleation growth comprises e.g. polishing the copper foil, depositing and covering with nickel metal, adding the covered nickel metal copper foil into growth chamber.

ZHANG A, YANG M, CHEN J, ZHAO Y, WEI W, ZHANG X

Gallium nitride-based film of graphene-modified patterned metal substrate, comprises patterned metal substrate, catalytic metal layer, graphene layer, aluminum-gallium-indium-nitrogen complex buffer layer and epitaxial layer.

QIN F, MA C, BAI Y, WANG D, LIN G

Imaging production of one-dimensional carbon nanotube and three-dimensional graphene composite material by patterning growth substrate, soaking in hydrofluoric acid solution, ultrasonically processing and magnetic control sputtering.

YU Y, HU Y, SUN T, YANG J, WEI D, SHI H, DU C