国家/地区 日本（3）
IPC部 B（3）
IPC大类 B01（3）
IPC小类 B01J（3）
IPC C23C016/26（3）
发明人
公开年
申请年
专利权人

Method of growing graphene used in e.g. electronic devices, involves heating insulated substrate placed in growing cavity, introducing gas containing catalytic elements into cavity, and pumping carbon source to cavity to grow film.

WANG H, TANG S, LU G, WU T, JIANG D, DING G, ZHANG X, XIE H, XIE X, JIANG M

Manufacture of monocrystal graphene film for semiconductor device, involves forming polycrystalline graphene on substrate using hydrocarbon gas, growing graphene film, forming catalyst, heating and recrystallizing.

HWANG C, HWANG C Y

Method of growing graphene for electronic device involves forming metal film on single crystal silicon, reacting single crystal silicon and part of metal film, and epitaxially growing metal silicide film on single crystal silicon.

HAYASHI K