国家/地区 美国（4）
IPC部 C（4）
IPC大类 C01（4） C23（4） B82（2）
C30（2） H01（2）
IPC小类 C01B（4）
IPC C01B031/04（4）
发明人 ZHANG Y（4）
公开年 2012（2）
申请年 2012（2） 
专利权人 ZHANG Y（3） DENG P（2） GUO H（2） LEI T（2）
UNIV XIDIAN（2） ZHANG K（2）

Method for growing graphene layer on metal foil for e.g. forming field-effect transistor, involves positioning foil in vessel placed in chamber, introducing hydrogen, annealing foil, introducing methane and depositing carbon on foil.

ZHOU C, ZHANG Y, ZHANG L

Device e.g. graphene nanoribbons useful in high speed and low power electronics comprises substrate, and first graphene nanoribbon overlying the substrate, where the first graphene nanoribbon has specific width.

ZHANG Y

Structural graphene production on silicon carbide substrate for manufacturing microelectronic devices includes depositing layer of silicon dioxide as mask, coating mask surface, and exposing to form structured pattern.

DENG P, GUO H, LEI T, ZHANG Y, ZHANG K, ZHANG F

Manufacture of graphene on silicon carbide substrate involves producing double-layer carbon membrane, depositing nickel film on silicon substrate, placing carbon surface of double-layer carbon membrane on nickel membrane, and annealing.

DENG P, GUO H, LEI T, ZHANG K, ZHANG Y