国家/地区 世界知识产权组织（4）
IPC部 C（4）
IPC大类 C01（4） C23（4） H01（4）
B82（2）
IPC小类 C01B（4）
IPC C23C016/26（4）
发明人
公开年 2012（4）
申请年 2011（3） 
专利权人

Formation of graphene-based device used in electronic field, involves depositing carbon on substrate having dielectric material, annealing carbon-deposited substrate, and forming ordered graphene on dielectric material.

KELBER J A, GADDAM S S, BJELKEVIG C L

Formation of graphene for graphene structure for transparent electrode, involves forming amorphous carbon layer on substrate, forming graphitizing catalyst layer, heating, crystallizing amorphous carbon layer and forming graphene layer.

KIM K B, LEE H H, KIM H M, CHO S Y

Method of directly synthesizing uniform multilayer graphene of semiconductor device, involves passing reaction gas into reaction chamber, after temperature in reaction chamber reaches specific level.

ZHONG Z, LEE S, LEE K

Manufacture of graphene used for forming graphene sheet, involves supplying carbon source-containing gas to metal catalyst layer for graphene growth, and forming graphene by inductively coupled plasma-chemical vapor deposition.

AHN J, BAE S K, HONG B H, JANG H, JUNG M H, KIM S J, LEE Y, YOO J B, AHN J H, LIU Z, BAE S, HONG B, LI R, JUNG M, KIM S